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DDTD114GC-7-F

Manufacturers: Diodes Incorporated
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: DDTD114GC-7-F
Description: TRANS PREBIAS NPN 200MW SOT23-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN - Pre-Biased
Base Part Number DTD114
Frequency - Transition 200MHz
Supplier Device Package SOT-23-3
Resistor - Emitter Base (R2) 10 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max) 500mA
Current - Collector Cutoff (Max) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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