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DMG3N60SJ3

Manufacturers: Diodes Incorporated
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: DMG3N60SJ3
Description: MOSFET BVDSS: 501V 650V TO251
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-251-3, IPak, Short Leads
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max) 41W (Tc)
Supplier Device Package TO-251
Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 10V
Drain to Source Voltage (Vdss) 650V
Input Capacitance (Ciss) (Max) @ Vds 354pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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