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HBDM60V600W-7

Manufacturers: Diodes Incorporated
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HBDM60V600W-7
Description: TRANS NPN/PNP 65V/60V SOT363
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Type NPN, PNP
Base Part Number HBDM60V600
Operating Temperature -55°C ~ 150°C (TJ)
Frequency - Transition 100MHz
Supplier Device Package SOT-363
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 500mA, 600mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Voltage - Collector Emitter Breakdown (Max) 65V, 60V
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