EPC2007C
Manufacturers: | EPC |
---|---|
Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | EPC2007C |
Description: | GANFET TRANS 100V 6A BUMPED DIE |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | EPC |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | eGaN® |
FET Type | N-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | +6V, -4V |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | Die |
Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 5V |
Power Dissipation (Max) | - |
Supplier Device Package | Die Outline (5-Solder Bar) |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V |
Drain to Source Voltage (Vdss) | 100V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
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