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EPC2012

Manufacturers:	EPC
Product Category:	Transistors - FETs, MOSFETs - Single
Data Sheet:	EPC2012
Description:	GANFET TRANS 200V 3A BUMPED DIE
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	EPC
Product Category	Transistors - FETs, MOSFETs - Single
Series	eGaN®
FET Type	N-Channel
Packaging	Cut Tape (CT)
Vgs (Max)	+6V, -5V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Part Status	Discontinued at Digi-Key
Mounting Type	Surface Mount
Package / Case	Die
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	-40°C ~ 125°C (TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Power Dissipation (Max)	-
Supplier Device Package	Die
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 5V
Drain to Source Voltage (Vdss)	200V
Input Capacitance (Ciss) (Max) @ Vds	145pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V

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