EPC2101ENG
Manufacturers: | EPC |
---|---|
Product Category: | Transistors - FETs, MOSFETs - Arrays |
Data Sheet: | EPC2101ENG |
Description: | GAN TRANS 2N-CH 60V BUMPED DIE |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | EPC |
Product Category | Transistors - FETs, MOSFETs - Arrays |
Series | eGaN® |
FET Type | 2 N-Channel (Half Bridge) |
Packaging | Tray |
FET Feature | GaNFET (Gallium Nitride) |
Part Status | Discontinued at Digi-Key |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Vgs(th) (Max) @ Id | 2.5V @ 2mA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V |
Supplier Device Package | Die |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
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In Stock 65 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimum: 1