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EPC2105ENG

Manufacturers: EPC
Product Category: Transistors - FETs, MOSFETs - Arrays
Data Sheet: EPC2105ENG
Description: GAN TRANS 2N-CH 80V BUMPED DIE
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer EPC
Product Category Transistors - FETs, MOSFETs - Arrays
Series eGaN®
FET Type 2 N-Channel (Half Bridge)
Packaging Bulk
FET Feature GaNFET (Gallium Nitride)
Part Status Discontinued at Digi-Key
Power - Max -
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V
Supplier Device Package Die
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Drain to Source Voltage (Vdss) 80V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
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