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GA10SICP12-263

Manufacturers: GeneSiC Semiconductor
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: GA10SICP12-263
Description: TRANS SJT 1200V 25A TO263-7
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer GeneSiC Semiconductor
Product Category Transistors - FETs, MOSFETs - Single
Series -
FET Type -
Packaging Tube
Vgs (Max) -
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id -
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 100mOhm @ 10A
Power Dissipation (Max) 170W (Tc)
Supplier Device Package D2PAK (7-Lead)
Drain to Source Voltage (Vdss) 1200V
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
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