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GA10SICP12-263

Manufacturers:	GeneSiC Semiconductor
Product Category:	Transistors - FETs, MOSFETs - Single
Data Sheet:	GA10SICP12-263
Description:	TRANS SJT 1200V 25A TO263-7
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	GeneSiC Semiconductor
Product Category	Transistors - FETs, MOSFETs - Single
Series	-
FET Type	-
Packaging	Tube
Vgs (Max)	-
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Part Status	Active
Mounting Type	Surface Mount
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id	-
Operating Temperature	175°C (TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 10A
Power Dissipation (Max)	170W (Tc)
Supplier Device Package	D2PAK (7-Lead)
Drain to Source Voltage (Vdss)	1200V
Input Capacitance (Ciss) (Max) @ Vds	1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-

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