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GPA030A135MN-FDR

Manufacturers:	Global Power Technologies Group
Product Category:	Transistors - IGBTs - Single
Data Sheet:	GPA030A135MN-FDR
Description:	IGBT 1350V 60A 329W TO3PN
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Global Power Technologies Group
Product Category	Transistors - IGBTs - Single
Series	-
IGBT Type	Trench Field Stop
Packaging	Tube
Input Type	Standard
Gate Charge	300nC
Part Status	Active
Power - Max	329W
Mounting Type	Through Hole
Package / Case	TO-3
Test Condition	600V, 30A, 5Ohm, 15V
Switching Energy	4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C	30ns/145ns
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-3PN
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Reverse Recovery Time (trr)	450ns
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	90A
Voltage - Collector Emitter Breakdown (Max)	1350V

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