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BFG 19S E6327

Manufacturers: Infineon Technologies
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: BFG 19S E6327
Description: RF TRANS NPN 15V 5.5GHZ SOT223-4
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - Bipolar (BJT) - RF
Gain 14dB ~ 8.5dB
Series -
Packaging Tape & Reel (TR)
Part Status Obsolete
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 5.5GHz
Supplier Device Package PG-SOT223-4
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Current - Collector (Ic) (Max) 210mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max) 15V
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