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BSB056N10NN3GXUMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: BSB056N10NN3GXUMA1
Description: MOSFET N-CH 100V 9A WDSON-2
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case 3-WDSON
Vgs(th) (Max) @ Id 3.5V @ 100µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Supplier Device Package MG-WDSON-2, CanPAK M™
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
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