BSC018NE2LSIATMA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | BSC018NE2LSIATMA1 |
Description: | MOSFET N-CH 25V 29A TDSON-8 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | OptiMOS™ |
FET Type | N-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
Supplier Device Package | PG-TDSON-8-6 |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Drain to Source Voltage (Vdss) | 25V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 4420 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
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