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BSG0810NDIATMA1
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | BSG0810NDIATMA1 |
| Description: | MOSFET 2N-CH 25V 19A/39A 8TISON |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Packaging | Tape & Reel (TR) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Part Status | Active |
| Power - Max | 2.5W |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Supplier Device Package | PG-TISON-8 |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
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In Stock 80 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $1.04 | $1.02 | $1.00 |
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