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DF200R12W1H3B27BOMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - IGBTs - Modules
Data Sheet: DF200R12W1H3B27BOMA1
Description: IGBT MODULE VCES 1200V 200A
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - IGBTs - Modules
Input Standard
Series -
IGBT Type -
Part Status Active
Power - Max 375W
Configuration 2 Independent
Mounting Type Chassis Mount
NTC Thermistor Yes
Package / Case Module
Operating Temperature -40°C ~ 150°C
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A
Current - Collector (Ic) (Max) 30A
Input Capacitance (Cies) @ Vce 2nF @ 25V
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
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In Stock 53 pcs

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