IPAN65R650CEXKSA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPAN65R650CEXKSA1 |
Description: | MOSFET NCH 650V 10.1A TO220-3 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | CoolMOS™ |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | Super Junction |
Part Status | Active |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
Power Dissipation (Max) | 28W (Tc) |
Supplier Device Package | PG-TO220 Full Pack |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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In Stock 63 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.61 | $0.60 | $0.59 |
Minimum: 1