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IPB025N10N3GE8187ATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPB025N10N3GE8187ATMA1
Description: MOSFET N-CH 100V 180A TO263-7
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Not For New Designs
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ Id 3.5V @ 275µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
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