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IPB036N12N3GATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPB036N12N3GATMA1
Description: MOSFET N-CH 120V 180A TO263-7
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Vgs(th) (Max) @ Id 4V @ 270µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Drain to Source Voltage (Vdss) 120V
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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