IPG20N06S4L11AATMA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Arrays |
Data Sheet: | IPG20N06S4L11AATMA1 |
Description: | MOSFET 2N-CH 8TDSON |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Arrays |
Series | Automotive, AEC-Q101, OptiMOS™ |
FET Type | 2 N-Channel (Dual) |
Packaging | Tape & Reel (TR) |
FET Feature | Logic Level Gate |
Part Status | Active |
Power - Max | 65W |
Mounting Type | Surface Mount, Wettable Flank |
Package / Case | 8-PowerVDFN |
Vgs(th) (Max) @ Id | 2.2V @ 28µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V |
Supplier Device Package | PG-TDSON-8-10 |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A |
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In Stock 53 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.89 | $0.87 | $0.85 |
Minimum: 1