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IPG20N10S4L35AATMA1

Manufacturers:	Infineon Technologies
Product Category:	Transistors - FETs, MOSFETs - Arrays
Data Sheet:	IPG20N10S4L35AATMA1
Description:	MOSFET 2N-CH 8TDSON
RoHS status:	RoHS Compliant

Product Description
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Attribute	Attribute Value
Manufacturer	Infineon Technologies
Product Category	Transistors - FETs, MOSFETs - Arrays
Series	Automotive, AEC-Q101, OptiMOS™
FET Type	2 N-Channel (Dual)
Packaging	Tape & Reel (TR)
FET Feature	Logic Level Gate
Part Status	Active
Power - Max	43W
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Vgs(th) (Max) @ Id	2.1V @ 16µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	35mOhm @ 17A, 10V
Supplier Device Package	PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs	17.4nC @ 10V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	1105pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A

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