IPI111N15N3GAKSA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPI111N15N3GAKSA1 |
Description: | MOSFET N-CH 150V 83A TO262-3 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | OptiMOS™ |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Vgs(th) (Max) @ Id | 4V @ 160µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 11.1mOhm @ 83A, 10V |
Power Dissipation (Max) | 214W (Tc) |
Supplier Device Package | PG-TO262-3 |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Drain to Source Voltage (Vdss) | 150V |
Input Capacitance (Ciss) (Max) @ Vds | 3230pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
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In Stock 83 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$2.55 | $2.50 | $2.45 |
Minimum: 1