IPP039N04LGHKSA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPP039N04LGHKSA1 |
Description: | MOSFET N-CH 40V TO220-3 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | OptiMOS™ |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Obsolete |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Vgs(th) (Max) @ Id | 2V @ 45µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 80A, 10V |
Power Dissipation (Max) | 94W (Tc) |
Supplier Device Package | PG-TO220-3 |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 87 pcs
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