IPS110N12N3GBKMA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPS110N12N3GBKMA1 |
Description: | MOSFET N-CH 120V 75A TO251-3 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | OptiMOS™ |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Obsolete |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Stub Leads, IPak |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 75A, 10V |
Power Dissipation (Max) | 136W (Tc) |
Supplier Device Package | PG-TO251-3 |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Drain to Source Voltage (Vdss) | 120V |
Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 60V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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In Stock 79 pcs
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