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IRF1902GPBF
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | IRF1902GPBF |
| Description: | MOSFET N-CH 20V 4.2A 8SOIC |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | HEXFET® |
| FET Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 4.5V |
| Power Dissipation (Max) | - |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
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In Stock 70 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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