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2N5551,412

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2N5551,412
Description: TRANS NPN 160V 0.3A TO-92
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Tube
Part Status Obsolete
Power - Max 630mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Type NPN
Base Part Number 2N5551
Operating Temperature 150°C (TJ)
Frequency - Transition 300MHz
Supplier Device Package TO-92-3
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector (Ic) (Max) 300mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 160V
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