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BC879,112

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: BC879,112
Description: TRANS NPN DARL 80V 1A TO-92
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 830mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Type NPN - Darlington
Operating Temperature 150°C (TJ)
Frequency - Transition 200MHz
Supplier Device Package TO-92-3
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Current - Collector (Ic) (Max) 1A
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 10V
Voltage - Collector Emitter Breakdown (Max) 80V
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