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BFU660F,115

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: BFU660F,115
Description: RF TRANS NPN 5.5V 21GHZ 4DFP
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - RF
Gain 12dB ~ 21dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 225mW
Mounting Type Surface Mount
Package / Case SOT-343F
Transistor Type NPN
Base Part Number BFU660
Operating Temperature 150°C (TJ)
Frequency - Transition 21GHz
Supplier Device Package 4-DFP
Noise Figure (dB Typ @ f) 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Current - Collector (Ic) (Max) 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 10mA, 2V
Voltage - Collector Emitter Breakdown (Max) 5.5V
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