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PDTB123ES,126
| Manufacturers: | NXP USA Inc. |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Data Sheet: | PDTB123ES,126 |
| Description: | TRANS PREBIAS PNP 500MW TO92-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Product Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Series | - |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Power - Max | 500mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Type | PNP - Pre-Biased |
| Base Part Number | PDTB123 |
| Resistor - Base (R1) | 2.2 kOhms |
| Supplier Device Package | TO-92-3 |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 73 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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