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PDTD113ES,126

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: PDTD113ES,126
Description: TRANS PREBIAS NPN 500MW TO92-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Packaging Tape & Box (TB)
Part Status Obsolete
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type NPN - Pre-Biased
Base Part Number PDTD113
Resistor - Base (R1) 1 kOhms
Supplier Device Package TO-92-3
Resistor - Emitter Base (R2) 1 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max) 500mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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