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PDTD123EK,115
| Manufacturers: | NXP USA Inc. |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Data Sheet: | PDTD123EK,115 |
| Description: | TRANS PREBIAS NPN 250MW SMT3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Product Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | NPN - Pre-Biased |
| Base Part Number | PDTD123 |
| Resistor - Base (R1) | 2.2 kOhms |
| Supplier Device Package | SMT3; MPAK |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 70 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
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