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PHN210,118
| Manufacturers: | NXP USA Inc. |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | PHN210,118 |
| Description: | MOSFET 2N-CH 30V 8SOIC |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchMOS™ |
| FET Type | 2 N-Channel (Dual) |
| Packaging | Tape & Reel (TR) |
| FET Feature | Logic Level Gate |
| Part Status | Obsolete |
| Power - Max | 2W |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
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In Stock 83 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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