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2SC5706-P-E

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SC5706-P-E
Description: TRANS NPN 100V 5A
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Last Time Buy
Power - Max 800mW
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Type NPN
Operating Temperature -
Frequency - Transition 400MHz
Supplier Device Package TP
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 2A
Current - Collector (Ic) (Max) 5A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Voltage - Collector Emitter Breakdown (Max) 100V
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