FQI12N60TU
Manufacturers: | ON Semiconductor |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | FQI12N60TU |
Description: | MOSFET N-CH 600V 10.5A I2PAK |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | ON Semiconductor |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | QFET® |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Obsolete |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 700mOhm @ 5.3A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 180W (Tc) |
Supplier Device Package | I2PAK (TO-262) |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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In Stock 86 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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