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HGTP10N120BN

Manufacturers: ON Semiconductor
Product Category: Transistors - IGBTs - Single
Data Sheet: HGTP10N120BN
Description: IGBT 1200V 35A 298W TO220AB
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - IGBTs - Single
Series -
IGBT Type NPT
Packaging Tube
Input Type Standard
Gate Charge 100nC
Part Status Not For New Designs
Power - Max 298W
Mounting Type Through Hole
Package / Case TO-220-3
Test Condition 960V, 10A, 10Ohm, 15V
Switching Energy 320µJ (on), 800µJ (off)
Td (on/off) @ 25°C 23ns/165ns
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220-3
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Voltage - Collector Emitter Breakdown (Max) 1200V
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