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MJE801STU

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: MJE801STU
Description: TRANS NPN DARL 60V 4A TO126
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Tube
Part Status Obsolete
Power - Max 40W
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Transistor Type NPN - Darlington
Operating Temperature 150°C (TJ)
Frequency - Transition -
Supplier Device Package TO-126-3
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Current - Collector (Ic) (Max) 4A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
Voltage - Collector Emitter Breakdown (Max) 60V
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