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MUN5312DW1T2G

Manufacturers:	ON Semiconductor
Product Category:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet:	MUN5312DW1T2G
Description:	TRANS NPN/PNP PREBIAS SOT363
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Power - Max	385mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Base Part Number	MUN53**DW1
Resistor - Base (R1)	22kOhms
Frequency - Transition	-
Supplier Device Package	SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2)	22kOhms
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)	50V

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