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NJVMJD112T4G

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: NJVMJD112T4G
Description: TRANS NPN DARL 100V 2A DPAK
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 20W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type NPN - Darlington
Base Part Number MJD112
Operating Temperature -65°C ~ 150°C (TJ)
Frequency - Transition 25MHz
Supplier Device Package DPAK
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector (Ic) (Max) 2A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Voltage - Collector Emitter Breakdown (Max) 100V
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In Stock 59 pcs

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