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NJVNJD35N04G

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: NJVNJD35N04G
Description: TRANS NPN DARL 350V 4A DPAK-4
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Tube
Part Status Active
Power - Max 45W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type NPN - Darlington
Base Part Number NJD35N04
Operating Temperature -65°C ~ 150°C (TJ)
Frequency - Transition 90MHz
Supplier Device Package DPAK
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 2A
Current - Collector (Ic) (Max) 4A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max) 350V
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In Stock 160 pcs

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