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NSBC115EPDXV6T1G
| Manufacturers: | ON Semiconductor |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Data Sheet: | NSBC115EPDXV6T1G |
| Description: | SS SOT563 RSTR XSTR TR |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Power - Max | 357mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 100kOhms |
| Frequency - Transition | - |
| Supplier Device Package | SOT-563 |
| Resistor - Emitter Base (R2) | 100kOhms |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 96 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.07 | $0.07 | $0.07 |
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