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NSBC123TDP6T5G

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet: NSBC123TDP6T5G
Description: TRANS 2NPN PREBIAS 0.339W SOT963
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 339mW
Mounting Type Surface Mount
Package / Case SOT-963
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Part Number NSBC1*
Resistor - Base (R1) 2.2kOhms
Frequency - Transition -
Supplier Device Package SOT-963
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max) 50V
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