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BSM180D12P2C101
| Manufacturers: | ROHM Semiconductor |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | BSM180D12P2C101 |
| Description: | MOSFET 2N-CH 1200V 180A MODULE |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | - |
| FET Type | 2 N-Channel (Half Bridge) |
| Packaging | Bulk |
| FET Feature | Silicon Carbide (SiC) |
| Part Status | Active |
| Power - Max | 1130W |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
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In Stock 21 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $410.07 | $401.87 | $393.83 |
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