TSM4NB65CI C0G
Manufacturers: | Taiwan Semiconductor Corporation |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | TSM4NB65CI C0G |
Description: | MOSFET N-CHANNEL 650V 4A ITO220 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | Taiwan Semiconductor Corporation |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | - |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Not For New Designs |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.37Ohm @ 2A, 10V |
Power Dissipation (Max) | 70W (Tc) |
Supplier Device Package | ITO-220AB |
Gate Charge (Qg) (Max) @ Vgs | 13.46nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Input Capacitance (Ciss) (Max) @ Vds | 549pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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In Stock 990 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.95 | $0.93 | $0.91 |
Minimum: 1