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TSM4ND65CI

Manufacturers: Taiwan Semiconductor Corporation
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TSM4ND65CI
Description: 650V 4A SINGLE N-CHANNEL POWER M
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Taiwan Semiconductor Corporation
Product Category Transistors - FETs, MOSFETs - Single
Series -
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ Id 3.8V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max) 41.6W (Tc)
Supplier Device Package ITO-220
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Drain to Source Voltage (Vdss) 650V
Input Capacitance (Ciss) (Max) @ Vds 596pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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