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TSM60NB099PW C1G

Manufacturers: Taiwan Semiconductor Corporation
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TSM60NB099PW C1G
Description: MOSFET N-CHANNEL 600V 38A TO247
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Taiwan Semiconductor Corporation
Product Category Transistors - FETs, MOSFETs - Single
Series -
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V
Power Dissipation (Max) 329W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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