TC58NYG2S3EBAI5
Manufacturers: | Toshiba Memory |
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Product Category: | USB Flash Drives |
Data Sheet: | TC58NYG2S3EBAI5 |
Description: | NAND Flash 1.8V 4Gb 43nm SLC NAND (EEPROM) |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
RoHS | Details |
Brand | Toshiba Memory |
Speed | 25 ns |
Product | NAND Flash |
Packaging | Tray |
Memory Size | 4 Gbit |
Memory Type | NAND |
Subcategory | Memory & Data Storage |
Timing Type | Synchronous |
Architecture | Block Erase |
Manufacturer | Toshiba |
Organization | 512 M x 8 |
Product Type | NAND Flash |
Data Bus Width | 8 bit |
Interface Type | Parallel |
Mounting Style | SMD/SMT |
Package / Case | TFBGA-63 |
Product Category | NAND Flash |
Moisture Sensitive | Yes |
Supply Current - Max | 30 mA |
Supply Voltage - Max | 1.95 V |
Supply Voltage - Min | 1.7 V |
Factory Pack Quantity | 180 |
Maximum Clock Frequency | - |
Maximum Operating Temperature | + 85 C |
Minimum Operating Temperature | - 40 C |
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In Stock 50 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimum: 1