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2SA1680,F(J

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SA1680,F(J
Description: TRANS PNP 2A 50V TO226-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 900mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Transistor Type PNP
Operating Temperature 150°C (TJ)
Frequency - Transition 100MHz
Supplier Device Package TO-92MOD
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Current - Collector (Ic) (Max) 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 2V
Voltage - Collector Emitter Breakdown (Max) 50V
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