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2SC2229-Y(MIT,F,M)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SC2229-Y(MIT,F,M)
Description: TRANS NPN 50MA 150V TO226-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 800mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 120MHz
Supplier Device Package TO-92MOD
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 150V
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