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2SC2714-O(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: 2SC2714-O(TE85L,F)
Description: RF TRANS NPN 30V 550MHZ SMINI
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - RF
Gain 23dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN
Operating Temperature 125°C (TJ)
Frequency - Transition 550MHz
Supplier Device Package S-Mini
Noise Figure (dB Typ @ f) 2.5dB @ 100MHz
Current - Collector (Ic) (Max) 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max) 30V
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