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2SC5085-Y(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: 2SC5085-Y(TE85L,F)
Description: RF TRANS NPN 12V 7GHZ USM
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - RF
Gain 11dB ~ 16.5dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Type NPN
Operating Temperature 125°C (TJ)
Frequency - Transition 7GHz
Supplier Device Package USM
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Current - Collector (Ic) (Max) 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max) 12V
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