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2SC5549,T6F(J

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SC5549,T6F(J
Description: TRANS NPN 1A 400V TO226-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 900mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition -
Supplier Device Package TO-92MOD
Vce Saturation (Max) @ Ib, Ic 1V @ 25mA, 200mA
Current - Collector (Ic) (Max) 1A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 40mA, 5V
Voltage - Collector Emitter Breakdown (Max) 400V
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