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2SD2206A(T6SEP,F,M
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single |
| Data Sheet: | 2SD2206A(T6SEP,F,M |
| Description: | TRANS NPN 2A 120V TO226-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - Single |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| Power - Max | 900mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | - |
| Supplier Device Package | TO-92MOD |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector (Ic) (Max) | 2A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
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In Stock 53 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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